ECN publication
Ladingsdrager-recombinatie in (multi)kristallijn silicium zonnecellen: CV-MOS en Donker I-V
Published by: Publication date:
ECN Solar Energy 1-8-1998
ECN report number: Document type:
ECN-C--99-011 ECN publication
Number of pages: Full text:
88 Download PDF  

In order to gain insight into the physics of recombination in siliconsolar cells measurements were carried out by means of the so-called C-V (capacity-voltage) MOS (Metal Oxide Semiconductor) installation. Also, a so-called Dark I-V measurement installation has been designed, constructed and tested. Both the results of the capacity-voltage (C-V) and current-voltage (I-V) measurements were compared with model calculations. 10 refs.

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