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ECN publication
Stable and efficient p-type multicrystalline silicon cells containing 20 PPMA interstitial oxygen
Published by: Publication date:
ECN Solar Energy 21-9-2009
ECN report number: Document type:
ECN-M--09-035 Conference Paper
Number of pages: Full text:
3 Download PDF  

Presented at: 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, 21-25 september 2009.

Interstitial oxygen is the most prevalent impurity in crystalline silicon. An upper limit of around 12 ppma [Oi] has long been accepted for multicrystalline solar cells. This paper demonstrates that it is possible to manufacture solar cells with an efficiency of over 15.4% at 20 ppma interstitial oxygen from commercial multicrystalline p-type silicon (mc-Si) wafers using ECN standard screen-print process. We also show that 20 ppma [Oi] wafers can be processed with industrial processing temperatures at least up to 900 oC.

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