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Title:
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Stable and efficient p-type multicrystalline silicon cells containing 20 PPMA interstitial oxygen
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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21-9-2009
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ECN report number:
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Document type:
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ECN-M--09-035
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Conference Paper
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Number of pages:
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Full text:
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3
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Download PDF
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Presented at: 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, 21-25 september 2009.
Abstract:
Interstitial oxygen is the most prevalent impurity in crystalline silicon. An upper limit of around 12 ppma [Oi] has long been accepted for multicrystalline solar cells. This paper demonstrates that it is possible to manufacture solar cells with an efficiency of over 15.4% at 20 ppma interstitial oxygen from commercial multicrystalline p-type silicon (mc-Si) wafers using ECN standard screen-print process. We also show that 20 ppma [Oi] wafers can be processed with industrial processing temperatures at least up to 900 oC.
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