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Title:
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A high throughput PECVD reactor for deposition of passivating SiN layers
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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1-5-2000
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ECN report number:
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Document type:
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ECN-RX--00-021
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Presented at: 16th European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, Scotland, 1-5 mei 2000.
Abstract:
A new high throughput PECVD reactor for deposition of passivating SiNlayers is presented. It is shown that the throughput of the reactor is easily
upscalable to industrial demands of more than 1000 wafers/hr and that the
deposited SiN layers have excellent surface- and bulk passivating properties.
Solar cells with an efficiency of more than 14.5% have been made. 5 refs.
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