|
Title:
|
|
Substantial improvement of the photovoltaic characteristics of TiO2/CuInS2 interfaces by the use of recombination barrier coatings
|
|
|
|
Author(s):
|
Lenzmann, F.O.; Nanu, B.; Kijatkina, O.; Belaidi, A.
|
|
|
|
Published by:
|
Publication date:
|
|
ECN
Solar Energy
|
1-3-2004
|
|
|
|
ECN report number:
|
Document type:
|
|
ECN-RX--04-035
|
Article (scientific)
|
|
|
|
Number of pages:
|
|
|
5
|
|
Published in: Thin Solid Films (Elsevier), , 2004, Vol.451-452, p.639-643.
Abstract:
The recent success of ultrathin insulator oxide coatings on mesoporous
TiO films
(such as AL2O3 and MgO) with regard to the efficiency of solid state dye-sensitized
solar cells (Jap.J. Appl.Phys.40 (2001)
L732) has received substantial
attention (J.Am.Chem.Soc. 125 (2003)
475; Chem.Mater .14 (2002) 2930).While
the physical origin for the beneficial effect of these coatings (referred
to as recombination barrier coatings in this text) is still under discussion,
it is certainly accompanied by a decrease of the interface recombination
rate (J.Am. Chem.Soc. 125 (2003)
475).These findings inspired
us to investigate the effect of recombination barrier coatings at nanostructured
TiO yCuInS interfaces.Due to the high internal interface
area, interfacerecombination
can be expected to be the dominant recombination pathway in this type
of solar cells and the investigation of concepts for its passivation
is therefore crucial. Apart from the oxide coatings we also included
In(OH)x Sy and In2S3 surfacelayers into our studies. In this contribution
we first provide experimental evidence for the sensitivity of the TiO2/CuInS2 interfacewith respect to recombination and then report on the
substantial improvement of the photovoltaic characteristics, in particular
the photocurrent density of flat and nanostructured TiO2/CuInS2 interfaces using Al2O3 barrier
and/or In2S3 buffer coatings.
These findings lead for the
first time to the practical realization of a nanostructured cell of
this type (TiO2/Al2
O3/ In2 S3 CuInS2 ) witha current density well above 10 mA/cm2 at 100 mW/cm2 illumination intensity and an overall efficiency of almost
3%.
Back to List