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Title:
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Hydrogen Passivation of Iron in Crystalline Silicon
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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1-6-2004
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ECN report number:
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Document type:
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ECN-RX--04-072
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Presented at: 19th European Photovoltaic Solar Energy Conference and Exhibition, Paris, France, 7-11 juni 2004.
Abstract:
Hydrogen passivation of iron in silicon is investigated by measuringthe recombination-active FeB-concentration with the light-induced FeB-dissociation
technique. Floatzone wafers were intentionally contaminated with iron.
Hydrogen passivation by annealing of the wafers with an SiNx coating
leads to a decrease of the FeB concentration with about a factor 3 (from
1.2x1013 cm-3 to about 4.5x1012 cm-3). Multicrystalline silicon wafers
without an intentional iron contamination show a similar decrease of
the measured iron concentration after annealing with SiNx coating. Based
on these results, we conclude that the FeB defect is passivated by hydrogen
in-diffusion after anneal of SiNx layers.
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