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ECN publication
Hydrogen Passivation of Iron in Crystalline Silicon
Azzizi, A.; Geerligs, L.J.; Macdonald, D.
Published by: Publication date:
ECN Solar Energy 1-6-2004
ECN report number: Document type:
ECN-RX--04-072 Conference Paper
Number of pages: Full text:
4 Download PDF  

Presented at: 19th European Photovoltaic Solar Energy Conference and Exhibition, Paris, France, 7-11 juni 2004.

Hydrogen passivation of iron in silicon is investigated by measuringthe recombination-active FeB-concentration with the light-induced FeB-dissociation technique. Floatzone wafers were intentionally contaminated with iron. Hydrogen passivation by annealing of the wafers with an SiNx coating leads to a decrease of the FeB concentration with about a factor 3 (from 1.2x1013 cm-3 to about 4.5x1012 cm-3). Multicrystalline silicon wafers without an intentional iron contamination show a similar decrease of the measured iron concentration after annealing with SiNx coating. Based on these results, we conclude that the FeB defect is passivated by hydrogen in-diffusion after anneal of SiNx layers.

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