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ECN publication
Title:
Passivation on MC-Si solar cells with PECVD SiNx:H using N2 and SiH4
 
Author(s):
Rieffe, H.C.; Soppe, W.J.; Weeber, A.W.; Hong, J.; Kessels, W.M.M.; Sanden, M.C.M. van de; Arnoldbik, W.M.
 
Published by: Publication date:
ECN Solar Energy 1-10-2002
 
ECN report number: Document type:
ECN-RX--02-050 Conference Paper
 
Number of pages: Full text:
4 Download PDF  

Presented at: PV in Europe - From PV Technology to Energy Solutions Conference and Exhibition, Rome, Italy, 7-11 oktober 2002.

Abstract:
Application of N2 instead of NH3 as precursorgas in Plasma Enhanced Chemical Vapor Deposition (PECVD) of SiNx:H can have significant advantages with respect to safety and environment. In this paper we will show that for MicroWave- PECVD, SiNx:H with good bulk passivating properties can be obtained if only N2 and SiH4 are used as process gasses. A drawback of the current SiNx:H grown with N2 as precursor gas is the higher absorption at shorter wavelengths with respect to SiNx:H grown with NH3 as precursor gas.


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