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Title:
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MW plasma enhanced CVD of intrinsic Si for thin film solar cells
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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14-3-2008
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ECN report number:
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Document type:
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ECN-M--08-024
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Conference Paper
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Number of pages:
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Full text:
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7
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Download PDF
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Presented at: MRS Spring Meeting, San Francisco, USA, 25-27 maart 2008.
Abstract:
The aim of the thin film silicon PV research program at ECN is the development of highthroughput production technology for high efficiency, microcrystalline and amorphous thin film silicon photovoltaics (PV) on flexible substrates. For this purpose, a roll-to-roll system has been
designed and constructed, consisting of three deposition chambers for the continuous deposition of n-type, intrinsic and p-type Si layer. In this paper, we will present optical and electrical characterisation of device quality intrinsic Si layers, deposited with Microwave (MW) plasma
enhanced chemical vapour deposition (PECVD), with a special focus on UV-reflection spectroscopy (UVRS). UVRS can be used to determine the crystallinity in very thin silicon layer and is interesting as a possible inline tool for layer quality assessment and crystallinity control.
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