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Title:
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Front side improvements for n-Pasha solar cells
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Author(s):
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Janssen, G.J.M.; Koppes, M.; Komatsu, Y.; Anker, J.; Liu, J.; Gutjahr, A.; Mewe, A.A.; Tool, C.J.J.; Romijn, I.G.; Siarheyeva, O.; Ernst, M.A.; Loo, B.H.W. van de; Kessels, W.M.M.
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Published by:
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Publication date:
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ECN
Solar Energy
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22-9-2014
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ECN report number:
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Document type:
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ECN-M--14-047
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Abstract:
We present a new approach to improve the efficiency of n-type solar cells by tuning the boron emitter doping profile and optimizing the surface passivation. The boron emitter profile is tuned using a new method of just etching the surface by 10-30 nm. The etching was carried out after diffusion and glass removal. This resulted in a boron emitter without boron depletion at the surface, a higher VOC by 6 mV and a higher efficiency by 0.2% absolute. To improve the surface passivation, we found that a very high implied VOC of 680±2 mV can be obtained with an improved pre-cleaning followed by a wet chemical surface oxidation and ALD Al2O3 capped with PECVD-SiNx.
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