|
Title:
|
|
Selective emitter in n-type c-Si solar cells
|
|
|
|
Author(s):
|
Liu, J.; Janssen, G.J.M.; Koppes, M.; Kossen, E.J.; Komatsu, Y.; Anker, J.; Gutjahr, A.; Vlooswijk, A.H.G.; Luchies, J.M.; Siarheyeva, O.; Granneman, E.; Romijn, I.G.
|
|
|
|
Published by:
|
Publication date:
|
|
ECN
Solar Energy
|
14-9-2015
|
|
|
|
ECN report number:
|
Document type:
|
|
ECN-M--15-011
|
Conference Paper
|
|
|
|
Number of pages:
|
Full text:
|
|
4
|
Download PDF
|
Abstract:
A selective emitter is expected to have a better blue response, less Auger recombination, less contact recombination and lower contact resistivity in industrially processed n-type solar cells. In this work, we present a controllable process to make a selective emitter by applying a printable resist on the emitter as a mask. In the subsequent etch process the p+ emitter can be selectively etched to optimize the passivation and conductivity. IV measurements from a batch of solar cells are presented to demonstrate the improvements on Voc and Isc. The mean efficiency of the SE cells is increased by 0.24% absolute compared to the standard homogeneous emitter cells resulting in a highest efficiency of 20.7%.
Back to List