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Title:
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On combining surface and bulk passivation of SiNx: H layers for mc-Si solar cells
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Author(s):
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Soppe, W.J.; Devilee, C.; Rieffe, H.C.; Schiermeier, S.E.A.; Bultman, J.H.; Weeber, A.W.; Hong, J.; Kessels, W.M.M.; Sanden, M.C.M. van de; Arnoldbik, W.M.; Schlemm, H.
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Published by:
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Publication date:
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ECN
Solar Energy
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1-5-2002
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ECN report number:
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Document type:
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ECN-RX--02-018
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Presented at: 29th IEEE Photovoltaic Specialists Conference, New Orleans, USA, 20-24 mei 2002.
Abstract:
A route, as followed by ECN, is described for development of SiNx:Hlayers deposited by microwave (MW) PECVD, which are suited for surface
and bulk
passivation of mc-Si solar cells. First research was focussed on surface
passivation and this resulted in the development of SiN layers that
were Si-rich and where the hydrogen is mainly bonded to silicon atoms.
A disadvantage of such Si-rich layers is their large absorption at shorter
wavelengths, which make them unsuitable as front side AR coatings. Further,
these layers appeared to be less suitable for bulk passivation. The
next step therefore was the development of SiN layers for bulk passivation.
For good bulk passivation of
solar cells by meáns of a thermal anneal of the SiN layers, we found
that SiN layers with high N-H bonding concentrations are required. Fine-tuning
of the deposition conditions of these layers, frnally resulted in the
development of a SiN layer type which combines the three desired properties:
low absorption (good anti-reflection coating), good surface passivatlon
(Seff on FZ wafers less than 50 cm/s) and good bulk passivation.
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