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Title:
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Interdigitated Back Contact Amorphous/crystalline Silicon Heterojunction Solar Cells
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Author(s):
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Iuliis, S. de; Geerligs, L.J.; Tucci, M.; Serenelli, L.; Cesare, G. de; Ceccarelli, M.
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Published by:
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Publication date:
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ECN
Solar Energy
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14-2-2007
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ECN report number:
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Document type:
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ECN-M--07-025
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Conference Paper
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Number of pages:
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Full text:
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2
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Download PDF
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Presented at: 17th International Photovoltaic Science and Engineering Conference (PVSEC17), Fukuoka, Japan, 3-7 december 2007.
Abstract:
This paper shows how the amorphous/crystalline silicon technology can be implemented in the interdigitated back contact solar cell design. The entire self-aligned mask and photolithography-free process is performed at temperature below 300 °C with the aid of one metallic mask to create the interdigitated pattern. An open-circuit voltage of 687 mV has been measured on a p-type mono-crystalline silicon wafer. We show that the uniformity of the deposited amorphous silicon layers is not influenced by the mask-assisted deposition process and that the alignment is feasible. Moreover, this paper investigates the photocurrent limiting factors by one-dimensional modelling and quantum efficiency measurements.
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