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Title:
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Defect transformation in intentionally contaminated FZ silicon during low temperature annealing
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Author(s):
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Habenight, H.; Gundel, P.; Mchedlidze, T.; Kittler, M.; Coletti, G.; Warta, W.
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Published by:
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Publication date:
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ECN
Solar Energy
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1-9-2008
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ECN report number:
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Document type:
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ECN-M--08-010
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Conference Paper
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Number of pages:
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Full text:
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5
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Download PDF
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Presented at: 23rd European Photovoltaic Solar Energy Conference and Exhibition, Valencia, Spain, 1-5 september 2008.
Abstract:
Silicon samples intentionally contaminated with iron during growth were investigated in the as-grown state and after a prolonged low temperature anneal at around 300 C with different characterisation techniques, i.e. Deep Level Transient Spectroscopy (DLTS), Temperature Dependent Lifetime Spectroscopy (TLDS) and Photoluminescence (PL) spectroscopy. A defect transformation was found, changing the type of defect from iron-related complexes to interstitial iron.
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