|
Title:
|
|
Boron concentration measurements at the I/P interface in nip a-Si solar cells
|
|
|
|
Author(s):
|
Aken, B.B. van; Duchamp, M.; Boothroyd, C.B.; Dunin-Borkowski, R.E.; Barnes, J-P.; Veillerot, M.; Soppe, W.J.
|
|
|
|
Published by:
|
Publication date:
|
|
ECN
Solar Energy
|
5-9-2011
|
|
|
|
ECN report number:
|
Document type:
|
|
ECN-M--11-022
|
Conference Paper
|
|
|
|
Number of pages:
|
Full text:
|
|
4
|
Download PDF
|
Abstract:
The p-type Si layer in n-i-p a-Si and ?c-Si solar cells on foil has several important requirements with respect to conductivity and optical transmission. We control the optical band gap and activation energy of p-a-SiC by varying the B2H6 and CH4 flows in the process chamber. Modelling shows that the optimum efficiency in n-i-p solar cells is obtained when the p-a-SiC band gap is just above the band gap of the absorber layer. We have assessed the potential of core-loss electron energy-loss spectroscopy (EELS) for detecting B and C and of low-loss EELS, in a spatially resolved manner, as probe of local variations in bulk plasmon energy. EELS in the transmission electron microscope (TEM) combines the necessary spatial resolution to investigate the boundary between p-a-SiC and i-a-Si with sufficient sensitivity to the boron content.
Back to List