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ECN publication
Remote linear radio frequency PECVD deposited high quality a-Si:H(p) layers and their application in Si heterojunction structures
Published by: Publication date:
ECN Solar Energy 9-6-2009
ECN report number: Document type:
ECN-M--09-074 Conference Paper
Number of pages: Full text:
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Presented at: 34th IEEE Photovoltaic Specialists Conference, Philadelphia, USA, 7-12 juni 2009.

In this paper, we report on deposition and properties of high quality boron doped p-type amorphous Si (a-Si:H(p)) layers on n-type float zone Si(100) wafers by remote linear radio frequency plasma-enhanced CVD. The a-Si:H(p)layers show excellent surface passivation that is comparable to the one of a-Si:H intrinsic layers (a-Si:H(i)), and high stability of the passivation when stored in the dark . Additionally, the measured dark conductivity of deposited a-Si(p) is increased up to >7×10-6 S/cm by annealing. In a Si heterojunction cell structure, the a-Si:H(p) layer will be the emitter on an n-type base wafer. The effective lifetime of test structures of a-Si(p)/c-Si(n)/a-Si(n) has approached 1 ms, and a high pseudo fill factor and open circuit voltage have been obtained from a SunsVoc measurement. We conclude that these a-Si:H(p) layers are very promising for the application in high performance silicon heterojunction solar cells without using an intermediate a-Si:H(i) layer.

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