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Title:
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Light trapping in alkaline texture etched crystalline silicon wafers
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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1-5-2000
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ECN report number:
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Document type:
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ECN-RX--00-017
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Presented at: 16th European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, Scotland, 1-5 mei 2000.
Abstract:
The surface morphologies of alkaline etched pyramid and tilted pyramidtextures have been accurately mapped using a specially adapted atomic force
microscope. The resulting height scans were used as input for the ray-
tracing program BIRANDY whereby light trapping is directly related to the
height data. Double and single sided textures were etched on (100), (210) and
(311) wafers of approximately 100 mum thickness and reflectance and light
trapping properties measured and modelled for various back surface reflectors
and under encapsulation. Although the light trapping for tilted pyramid
textures is high, the angles and symmetry of the #left brace#111#right brace#
facets of upright pyramids on (100) leads to slightly better light trapping
overall. The maximum short-circuit current density Jsc(max) for tilted
pyramids approaches that of (100) when these textures are encapsulated due to
the resulting reflection reduction. 6 refs.
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