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Publications from author Hylton, J.D. 
Hylton, J.D.;
Wet chemical etching for crystalline silicon solar cells
ECN-RX--06-064 EN juni 2006; 4 pag.
Presented at: 5th International Workshop on Physical Chemistry of Wet Etching of Semiconductors PCWECS, Saarbrücken, Germany, 19-21 juni 2006.
 
Hylton, J.D.;
Light coupling and light trapping in alkaline etched multicrystalline silicon wafers for solar cells
ECN-B--06-012 EN april 2006; 0 pag.
 
Hylton, J.D.; Burgers, A.R.; Sinke, W.C.;
Light trapping in alkaline texture etched crystalline silicon wafers
ECN-RX--00-017 EN mei 2000; 4 pag.
Presented at: 16th European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, Scotland, 1-5 mei 2000.
 
Burgers, A.R.; Tool, C.J.J.; Hylton, J.D.; Weeber, A.W.; Verholen, A.G.B.J.; Gardeniers, J.G.E.; Boer, M.J. de; Elwenspoek, M.C.; Twente University, ;
Silicon solar cells structured by reactive ion etching and processed with screen printing
ECN-RX--98-037 EN juli 1998; 4 pag.
Published in: Paper, presented at the 2nd World conference and exhibition on photovoltaic solar energy conversion, Vienna, Austria, 6-10 July (), , Ed., p.-.
 
Hylton, J.D.; Burgers, A.R.; Sinke, W.C.;
Absorption in thin textured silicon wafers
ECN-RX--97-029 EN 1997; 6 pag.
Published in: Paper, presented at the 14th European photovoltaic solar energy conference and exhibition, 30 June - 4 July, 1997, Barcelona, Sp (), , Ed., p.-.
 
Burgers, A.R.; Kinderman, R.; Hylton, J.D.; Moor, H.H.C. de; Sinke, W.C.;
Light-trapping in saw-damage etched silicon wafers
ECN-RX--97-030 EN 1997; 5 pag.
Published in: Paper, presented at the 14th European photovoltaic solar energy conference and exhibition, 30 June - 4 July 1997, Barcelona, Spa (), , Ed., p.-.
 
Hylton, J.D.; Burgers, A.R.; Kinderman, R.; Sinke, W.C.;
Determination of facet orientations on alkaline etched multicrystallinewafers
ECN-RX--96-020 EN 1996; 6 pag.
 
Burgers, A.R.; Kinderman, R.; Hylton, J.D.; Sinke, W.C.;
Comparison of alkaline etches on multi-crystalline wafers
ECN-RX--95-061 EN 1995; 6 pag.