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Title:
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Determination of facet orientations on alkaline etched multicrystallinewafers
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Author(s):
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Published by:
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Publication date:
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ECN
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1996
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ECN report number:
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Document type:
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ECN-RX--96-020
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Other
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Number of pages:
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Full text:
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6
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Download PDF
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Abstract:
A method is presented by which the orientations of exposed etch facets,resulting from alkaline saw-damage and texture etching, can be determined.
The method employs Laue photography, whereby reflected X-ray spots correspond
with defined crystallographic planes, and localised light reflection or
'scatter recordings' of He-Ne light reflected preferentially from the faceted
etch surface. It is shown that the combination of these two techniques can
give the Miller indices corresponding to the surface normals to the etch
facets. Angular information is hereby obtained such that the surface
geometries of multi-crystalline silicon wafers are determined for the two
etch types for crystals of different orientation. 5 figs., 9 refs.
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