ECN publication
Unraveling of bulk and surface behaviour in high quality c-Si material via TIDLS
Bernardini, S.; Naerland, T.U.; Coletti, G.; Ding, L.; Blum, A.L.; Bertoni, M.L.
Published by: Publication date:
ECN Solar Energy 21-11-2016
ECN report number: Document type:
ECN-W--16-047 Article (scientific)
Number of pages:

Published in: IEEE Journal of Photovoltaics (IEEE), , 2016, Vol., p.2863-2867.

The current trend in silicon photovoltaics towards high-quality thin mono-crystalline silicon substrates makes the accurate representation of surface recombination of utmost importance. It has been shown by several authors that an effective way to study detrimental defects in silicon wafers is by means of temperature and injection dependent lifetime spectroscopy (TIDLS) coupled with the Shockley-Read-Hall recombination model. Given its high sensitivity this is an excellent technique to study high lifetime substrates. However, a thorough evaluation of the surface recombination velocity (SRV) dependence on injection level and temperature is vital to the extrapolation of meaningful results regarding the defects contained in the bulk of the material. Here, we present a TIDLS study of a-Si:H(i), a-Si:H(n) and a-Si:H(p) deposited on n-type low-resistivity FZ substrates. We evaluate the impact of every dielectric layer on the total SRV temperature- and injection dependence while demonstrating its fundamental role in teff behavior of high-quality Si substrate.

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