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Title:
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Ladingsdrager-recombinatie in (multi)kristallijn silicium zonnecellen: CV-MOS en Donker I-V
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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1-8-1998
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ECN report number:
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Document type:
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ECN-C--99-011
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ECN publication
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Number of pages:
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Full text:
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88
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Download PDF
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Abstract:
In order to gain insight into the physics of recombination in siliconsolar cells measurements were carried out by means of the so-called C-V
(capacity-voltage) MOS (Metal Oxide Semiconductor) installation. Also, a
so-called Dark I-V measurement installation has been designed, constructed
and tested. Both the results of the capacity-voltage (C-V) and
current-voltage (I-V) measurements were compared with model calculations. 10
refs.
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