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ECN publication
Impact of Mo and Fe multicrystalline float zone silicon solar cells
Coletti, G.; Geerligs, L.J.; Manshanden, P.; Riepe, S.; Warta, W.; Arumughan, J.; Kopecek, R.
Published by: Publication date:
ECN Solar Energy 10-8-2006
ECN report number: Document type:
ECN-M--06-080 Conference Paper
Number of pages: Full text:
5 Download PDF  

Presented at: 16th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Denver CO, USA, 6-9 augustus 2006.

The aim of this work is to provide an updated reference for the impact and incorporation of impurities in the current cell process technology for monocrystalline and multicrystalline Si-wafers. Molybdenum and Iron are introduced in silicon melt before the crystallisation of FZ ingots. Impurity concentration in the feedstock ranged from 10 to 3000 ppma for Fe and from 300 to 30000 ppma for Mo. A big drop on the Voc and IQE was visible for Mo with 30000 ppma. Fe results in different behaviour in mono and multicrystalline wafers. In monocrystalline wafers the process is able to get rid of the Fe for concentration up to 200 ppma. In case of multicrystalline for all the range investigated the results are equivalent and comparable with the worst results obtained for the cast mc-Si reference wafers.

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