Skip Navigation Links.

Search for publications:

Limit search to the fields

ECN publication
Interdigitated Back Contact Amorphous/crystalline Silicon Heterojunction Solar Cells
Iuliis, S. de; Geerligs, L.J.; Tucci, M.; Serenelli, L.; Cesare, G. de; Ceccarelli, M.
Published by: Publication date:
ECN Solar Energy 14-2-2007
ECN report number: Document type:
ECN-M--07-025 Conference Paper
Number of pages: Full text:
2 Download PDF  

Presented at: 17th International Photovoltaic Science and Engineering Conference (PVSEC17), Fukuoka, Japan, 3-7 december 2007.

This paper shows how the amorphous/crystalline silicon technology can be implemented in the interdigitated back contact solar cell design. The entire self-aligned mask and photolithography-free process is performed at temperature below 300 °C with the aid of one metallic mask to create the interdigitated pattern. An open-circuit voltage of 687 mV has been measured on a p-type mono-crystalline silicon wafer. We show that the uniformity of the deposited amorphous silicon layers is not influenced by the mask-assisted deposition process and that the alignment is feasible. Moreover, this paper investigates the photocurrent limiting factors by one-dimensional modelling and quantum efficiency measurements.

Back to List