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Title:
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Comparison of high efficiency solar cells on large area n-type and p-type silicon wafers with screen-printed aluminum-alloyed rear junction
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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3-10-2007
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ECN report number:
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Document type:
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ECN-M--07-110
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Conference Paper
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Number of pages:
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Full text:
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5
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Download PDF
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Presented at: 33rd IEEE Photovoltaic Specialists Conference, San Diego, USA, 11-16 mei 2008.
Abstract:
Low-cost, high-efficiency, and large area n-type silicon cells can be processed based on the screen printed Aluminum-alloyed rear junction concept. This process uses fabrication techniques which are very close to the current industry-standard screen printed mc-Si cell process. We compare, by experimental tests and modeling, the differences of using n-type
wafers and p-type wafers with this process. An independently confirmed record-high efficiency of 17.4% is achieved on n-type floatzone (FZ) silicon
wafers (area 140 cm²). On p-type FZ wafers, with the same process 17.6% is obtained, and 16.8% on p-type Cz wafers. Model calculations allow us to identify the potential for further enhancement of the n-type cell
efficiency to slightly above 18.0% by improving front surface passivation. We also discuss experimental characteristics of cells produced by this process from n-type multicrystalline wafers.
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