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Title:
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Back Enhanced Heterostructure with InterDigitated contact – BEHIND - solar cell
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Author(s):
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Tucci, M.; Serenelli, L.; Salza, E.; Pirozzi, L.; Cesare, G. de; Caputo, D.; Ceccarelli, M.; Martufi, P.; Iuliis, S. de; Geerligs, L.J.
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Published by:
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Publication date:
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ECN
Solar Energy
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1-9-2008
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ECN report number:
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Document type:
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ECN-M--08-007
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Presented at: IUMRS-ICEM 2008 International Conference on Electronic Materials 2008, Sydney, Australia, 28 juli 2008-1 augustus 2008.
Abstract:
In this paper we investigate in detail how the heterostructure concept can be implemented in an interdigitated back contact solar cell, in which both the emitters are formed on the back side of the c-Si wafer by amorphous/crystalline silicon heterostructure, and at the same time the grid-less front surface is passivated by a double layer of amorphous silicon and silicon nitride, which also provides an anti-reflection coating. The entire process, held at temperature below 300 °C, is photolithographyfree, using a metallic self-aligned mask to create the
interdigitated pattern. An open-circuit voltage of 695 mV has
been measured on this device fabricated. The mask-assisted
deposition process does not influence the uniformity of the
deposited amorphous silicon layers. Several technological aspects
that limit the fill factor are considered and discussed.
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