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Title:
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Large area screen printed N-type base silicon solar cells with efficiency exceeding 18%
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Author(s):
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Mihailetchi, V.D.; Coletti, G.; Komatsu, Y.; Geerligs, L.J.; Kvande, R.; Arnberg, L.; Wambach, K.; Knopf, C.; Kopecek, R.; Weeber, A.W.
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Published by:
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Publication date:
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ECN
Solar Energy
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4-2-2008
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ECN report number:
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Document type:
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ECN-M--08-008
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Presented at: 23rd European Photovoltaic Solar Energy Conference and Exhibition, Valencia, Spain, 1-5 september 2008.
Abstract:
There is currently much interest in n-type base solar cells because of potential advantages, both of silicon base material and of cell process, for high efficiency. We present results of n-base solar cells on large area multicrystalline and monocrystalline silicon wafers, produced
using simultaneous diffusion of phosphorus back surface field and boron emitter, screen-printed metallization and firing through. The cell process leads to record high efficiencies of 16.4% on multicrystalline and 18.3% on monocrystalline wafers. It is experimentally demonstrated that in
multi-crystalline Si a low resistivity is correlated to reduced cell efficiency, with the optimum base resistivity lying between 1.5 and 4 Ocm. By characterizing and modeling cells from monocrystalline Si, from nominally clean multicrystalline Si, as well as from intentionally Fe-contaminated multi-crystalline Si, the impact of purity on emitter recombination is investigated in more detail.
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