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Title:
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Internal gettering of iron and chromium to improve multicrystalline silicon wafers
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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3-6-2009
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ECN report number:
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Document type:
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ECN-M--09-080
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Presented at: 3rd International Workshop on Crystalline Silicon Solar Cells, Trondheim, Norway, 3-5 juni 2009.
Abstract:
Metallic impurities in interstitial form are one of the most important limiting factors for minority carrier lifetimes in p-type silicon. Interstitial impurities can be transformed into less harmful precipitates by annealing. In this way, it is shown that the minority carrier lifetime can be increased with one order of magnitude for iron and with two orders of magnitude for chromium.
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