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ECN publication
Passivation of Highly Boron Doped Silicon Surfaces by Sputtered AlOx and PECVD SiN, a Comparison
Li, T.T.A.; Cuevas, A.; Tan, J.; Samundsett, C.; Oosterling - Saynova, D.S.; Geerligs, L.J.
Published by: Publication date:
ECN Solar Energy 12-12-2010
ECN report number: Document type:
ECN-M--10-067 Conference Paper
Number of pages: Full text:
2 Download PDF  

Presented at: Conference on Optoelectronic and Microelectronic Materials and Devices, Canberra, Australia, 12-15 december 2010.

We show that boron-diffused emitters can be passivated with AlOx deposited using RF sputtering of an Al target. The surface passivation achieved so far is inferior to that obtained using an op-timised PECDV SiN process that in-cludes a chemically grown SiO2 interfa-cial layer. Nevertheless, the levels of passivation obtained, expressed by emitter recombination current densities of JoE=228-349 fA/cm2 for sheet resistances of 88–210 O/?, are already consistent with solar cell with efficiencies in the 20% range.

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