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Title:
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Light-induced degradation in compensated mc-Si p-type solar cell
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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3-6-2012
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ECN report number:
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Document type:
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ECN-M--12-061
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Conference Paper
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Number of pages:
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Full text:
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6
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Download PDF
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Abstract:
Light-induced degradation (LID) due to boron-oxygen complex formation seriously deminishes the efficiency of p-type solar cells. The influence of dopants concentration, net doping and oxygen on the degradation process is investigated using a large variety of B and P compensated mc-Si ingots. Our experiments indicate that the trend of LID depends on the amounts of interstitial oxygen [Oi] and total boron [B]. No clear dependence was found on net doping.
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