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Title:
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The role of the oxide in the carrier selectivity of metal/poly-Si/oxide contacts to silicon wafers
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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25-9-2017
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ECN report number:
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Document type:
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ECN-M--17-031
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Conference Paper
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Number of pages:
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Full text:
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6
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Download PDF
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Presented at: EUPVSEC, Amsterdam, , 25-29 september 2017.
Abstract:
Simulation results are presented that elucidate the role of the interfacial oxide layer in the passivation and carrier selectivity exhibited by doped poly-Si contact layers. An approach is introduced by which the oxide is represented as a layer with limited charge carrier mobility. This approach is easy to implement in numerical simulations and directly affects the conductivity of minority as well as of majority charge carriers, which determine the carrier selectivity. Our results show that for optimal passivation and carrier selectivity the oxide should not be a perfect tunnel oxide but should show higher effective charge carrier mobility. This means that poly-Si/oxide layers with substantial in-diffusion tails can be used, which has benefits when fire-through metallization is applied.
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