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Title:
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Contacting and interconnection of CISCuT material
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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1-5-2000
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ECN report number:
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Document type:
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ECN-RX--00-023
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Presented at: 16th European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, Scotland, 1-5 mei 2000.
Abstract:
The specific properties of the CISCuT material ask for adapted contactmaterials and interconnection concepts. To control the material property and
discover damages that are introduced during contacting shunt formation is
followed by suitable detection methods. One method to discover shunts is a
locally resolved (1mm steps) Voc-scan of the cell area at bias irradiation.
Moreover, a novel shunt detection method, the Parallel Resistance Analysis by
Mapping of Potential (PRAMP) is tested for the first time on CIS material.
After optimization of metal composition and deposition method a sputtered
(NiCrCu)Sn metallisation showed to be the most suitable contact for the
CISCuT cells. The interconnection methods ultrasonic welding and thermode
soldering are tested. At present the thermode soldering method derived to be
most favourable for the interconnection of the CISCuT-strips. The thin copper
support and high flexibility of the CISCuT strips allow to choose for a
roof-tile arrangement as module design. 4 refs.
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