|
Title:
|
|
Passivation on MC-Si solar cells with PECVD SiNx:H using N2 and SiH4
|
|
|
|
Author(s):
|
Rieffe, H.C.; Soppe, W.J.; Weeber, A.W.; Hong, J.; Kessels, W.M.M.; Sanden, M.C.M. van de; Arnoldbik, W.M.
|
|
|
|
Published by:
|
Publication date:
|
|
ECN
Solar Energy
|
1-10-2002
|
|
|
|
ECN report number:
|
Document type:
|
|
ECN-RX--02-050
|
Conference Paper
|
|
|
|
Number of pages:
|
Full text:
|
|
4
|
Download PDF
|
Presented at: PV in Europe - From PV Technology to Energy Solutions Conference and Exhibition, Rome, Italy, 7-11 oktober 2002.
Abstract:
Application of N2 instead of NH3 as precursorgas in Plasma Enhanced Chemical Vapor Deposition (PECVD) of SiNx:H
can have significant advantages with respect to safety and environment.
In this paper we will show that for MicroWave- PECVD, SiNx:H
with good bulk passivating properties can be obtained if only N2
and SiH4 are used as process gasses. A drawback of the current
SiNx:H grown with N2 as precursor gas is the higher
absorption at shorter wavelengths with respect to SiNx:H
grown with NH3 as precursor gas.
Back to List