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ECN publication
Improved thermally stable surface and bulk passivation of PECVD SiNx:H using N2 and SiH4
Weeber, A.W.; Rieffe, H.C.; Goris, M.J.A.A.; Soppe, W.J.; Hong, J.; Kessels, W.M.M.; Sanden, M.C.M. van de
Published by: Publication date:
ECN Solar Energy 1-5-2003
ECN report number: Document type:
ECN-RX--03-021 Conference Paper
Number of pages: Full text:
4 Download PDF  

Presented at: 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11-18 mei 2003.

Excellent and thermally stable surface passivation of SiNx:H grown usingN2 and SiH4 as precursor gases has been obtained with MicroWave PECVD. The thermal stability of the surface passivation is even better than that for layers deposited with NH3 and SiH4. Additionally, we found that the bulk passivating properties of SiNx:H deposited with N2? are as good as that of the standard SiNx:H deposited with NH3?. Absorption at shorter wavelengths in SiNx:H layers deposited with N2? is somewhat higher. Solar cell efficiencies are comparable for both nitrides.

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