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ECN publication
Light-Induced Lifetime Degradation in Multicrystalline Silicon
Published by: Publication date:
ECN Solar Energy 1-8-2003
ECN report number: Document type:
ECN-RX--03-052 Conference Paper
Number of pages: Full text:
4 Download PDF  

Presented at: 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Vail CO, USA, 10-13 augustus 2003.

The correlation between interstitial oxygen content and light-inducedlifetime degradation in cast multicrystalline silicon is complex. On a wafer-averaged scale, there is a strong positive correlation, which has been parameterized in this paper to model the impact of this degradation on cell voltage for a typical industrial process. However, on a local, grain to grain scale within a given wafer, the degradation can vary by an order of magnitude, while the interstitial oxygen content remains almost unchanged. This supports recent suggestions that Oi is not directly involved in the chemical composition of the defect.

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