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Title:
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Light-Induced Lifetime Degradation in Multicrystalline Silicon
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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1-8-2003
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ECN report number:
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Document type:
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ECN-RX--03-052
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Conference Paper
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Number of pages:
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Full text:
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4
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Download PDF
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Presented at: 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Vail CO, USA, 10-13 augustus 2003.
Abstract:
The correlation between interstitial oxygen content and light-inducedlifetime degradation in cast multicrystalline silicon is complex. On
a wafer-averaged scale, there is a strong positive correlation, which
has been parameterized in this paper to model the impact of this degradation
on cell voltage for a typical industrial process. However, on a local,
grain to grain scale within a given wafer, the degradation can vary
by an order of magnitude, while the interstitial oxygen content remains
almost unchanged. This supports recent suggestions that Oi is not directly
involved in the chemical composition of the defect.
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