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Title:
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Base Doping and Recombination Activity of Impurities in Crystalline Silicon Solar Cells
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Author(s):
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Geerligs, L.J.; Macdonald, D.
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Published by:
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Publication date:
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ECN
Solar Energy
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1-1-2004
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ECN report number:
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Document type:
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ECN-RX--04-006
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Article (scientific)
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Number of pages:
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8
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Published in: Progress in Photovoltaics: Research and Applications (John Wiley & Sons Ltd.), , 2004, Vol.12, p.309-316.
Abstract:
The optimisation of base doping for industrial crystalline silicon solarcells is examined with model calculations. Focus is on the relation
between base doping and carrier recombination through the important
impurities intestitial iron (Fei) and the metastable boron-oxygen (BO)
complex. In p-type silicon, the optimum base resistivity is strongly
dependent on defect concentration. In n-type silicon, recombination
due to Fei is much lower and nearly independent of resistivity. Fei
is likely representative for other transition metal impurities. In many
real cells a balance between Fei or similar defects, and BO will occur.
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