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ECN publication
Base Doping and Recombination Activity of Impurities in Crystalline Silicon Solar Cells
Geerligs, L.J.; Macdonald, D.
Published by: Publication date:
ECN Solar Energy 1-1-2004
ECN report number: Document type:
ECN-RX--04-006 Article (scientific)
Number of pages:

Published in: Progress in Photovoltaics: Research and Applications (John Wiley & Sons Ltd.), , 2004, Vol.12, p.309-316.

The optimisation of base doping for industrial crystalline silicon solarcells is examined with model calculations. Focus is on the relation between base doping and carrier recombination through the important impurities intestitial iron (Fei) and the metastable boron-oxygen (BO) complex. In p-type silicon, the optimum base resistivity is strongly dependent on defect concentration. In n-type silicon, recombination due to Fei is much lower and nearly independent of resistivity. Fei is likely representative for other transition metal impurities. In many real cells a balance between Fei or similar defects, and BO will occur.

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