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Title:
Structural and passivating properties of SiNx:H deposited using different precursor gases
Author(s):
Weeber, A.W.; Rieffe, H.C.; Sinke, W.C.; Soppe, W.J.
Published by:	Publication date:
ECN Solar Energy	1-6-2004
ECN report number:	Document type:
ECN-RX--04-062	Conference Paper
Number of pages:	Full text:
4	Download PDF

Presented at: 19th European Photovoltaic Solar Energy Conference and Exhibition, Paris, France, 7-11 juni 2004.

Abstract:
Structural properties of SiN_x:H layers deposited with N₂SiH₄ or NH₃SiH₄ using a MicroWave PECVD system are examined in detail and related to passivating properties. It is shown that the Si‑N bond density is an important parameter for both surface and bulk passivation. The lower the Si‑N bond density the better the surface passivation. This corresponds to higher Si‑H bond densities and a higher refractive index. For maximum bulk passivation there seems to be an optimal Si‑N bond density around 1.1´10²³ cm^-3. The Si‑N bond density is related to the relative change in H content during anneal.

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