Title:
|
New approach for firing optimisation in crystalline silicon cell technology
|
|
Author(s):
|
|
|
Published by:
|
Publication date:
|
ECN
Solar Energy
|
1-6-2004
|
|
ECN report number:
|
Document type:
|
ECN-RX--04-065
|
Conference Paper
|
|
Number of pages:
|
Full text:
|
4
|
Download PDF
|
Presented at: 19th European Photovoltaic Solar Energy Conference and Exhibition, Paris, France, 7-11 juni 2004.
Abstract:
A new approach for firing optimization is introduced and demonstrated on 10 different pastes.
The approach uses fewer settings and is faster than the methods traditionally
used. Therefore the approach will make evaluation of new pastes and
processes easier. The method uses a cross belt temperature profile to
subject a cell with screen-printed paste to different temperatures while
firing in the infrared furnace. J-V data, spatially resolved wafer peak
temperatures and spatially resolved contact resistances using the Corescan,
are used to determine settings for final optimization. Optimal settings
for the ten evaluated pastes were obtained in only two steps and using
few cells. With only three cells, a scan
over a temperature range of about 180°C could be performed. In this
way also the firing window could be assessed. The method is
applicable both in industry and R&D.
Back to List