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Title:
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Effective and practical phosphorous gettering of multicrystalline silicon
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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1-6-2005
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ECN report number:
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Document type:
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ECN-RX--05-002
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Conference Paper
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Number of pages:
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Full text:
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3
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Download PDF
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Presented at: 20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, Spain, 6-10 juni 2005.
Abstract:
Gettering
during an emitter diffusion in multicrystalline silicon is improved
by adding a low-temperature tail to the standard diffusion. The tail
keeps the emitter sheet resistance within the usable range for solar
cells. An increase in minority carrier lifetime by a factor ten is obtained.
Decrease in recombination activity of grain boundaries and decrease
in interstitial iron concentration are mainly responsible for this improved
lifetime. The proposed mechanisms for this improvement are: reduction
of size of precipitates because of the longer duration and improved
thermodynamics and kinetics of the gettering because of the lower temperature.
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