|
Title:
|
|
Passivating mc-Si solar cells using SiNx:H: Magic or Physics
|
|
|
|
Author(s):
|
|
|
|
|
|
Published by:
|
Publication date:
|
|
ECN
Solar Energy
|
1-6-2005
|
|
|
|
ECN report number:
|
Document type:
|
|
ECN-RX--05-007
|
Conference Paper
|
|
|
|
Number of pages:
|
Full text:
|
|
4
|
Download PDF
|
Presented at: 20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, Spain, 6-10 juni 2005.
Abstract:
Bulk
passivation with SiNx:H has been so far a barely understood
effect that can only be optimized for cell production in an empirical
way. In this study we determine the structural properties of SiNx:H
layers and relate these to both the deposition parameters and its passivating
qualities for solar cells. These structural properties, such as Si-N
and Si-H bond densities, of the SiNx:H layers deposited with
either N2, NH3 or ND3 and silane are
measured with FTIR. We show that Si-N bond
density is an important parameter governing both the bulk and surface
passivation of
Back to List