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ECN publication
Spectroscopical and electrical characterization of n-type multicrystalline silicon
Published by: Publication date:
ECN Solar Energy 1-6-2005
ECN report number: Document type:
ECN-RX--05-012 Conference Paper
Number of pages: Full text:
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Presented at: 20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, Spain, 6-10 juni 2005.


This paper deals with a systematic investigation of the defect features associated to microstructure disorder and to impurities contamination of n-type mc-Si ingots. A systematic comparison of the electrical properties with the radiative and non-radiative defect recombination activity was carried out using photoluminescence and Electron Beam Induced Current techniques (EBIC).  This allowed us to identify the optically active defects responsible for the wafer quality losses, mainly dislocations and precipitates. Changes in defect activity after different process steps were also studied. EBIC maps showed a low density of these electrically active defects with low recombination strength. All the electrical and optical analyses confirm the good quality properties of n-type multicrystalline silicon. As we expected,  solar cells processed using this material have shown good efficiencies close to 15% as reported in another work submitted to this conference [1]

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