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Title:
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Dynamics of light-induced FeB pair dissociation in crystalline silicon
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Author(s):
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Geerligs, L.J.; Macdonald, D.
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Published by:
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Publication date:
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ECN
Solar Energy
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1-11-2004
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ECN report number:
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Document type:
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ECN-RX--05-042
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Article (scientific)
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Number of pages:
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3
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Published in: Applied Physics Letters (American Institute of Physics), , 2004, Vol.85, p.5227-5229.
Abstract:
The dynamics of light-induced dissociation of iron?boron
(FeB)
pairs in p-type crystalline silicon is
investigated. The dissociation is observed to be a single-exponential
process which is balanced with
thermal repairing. The dissociation rate is proportional to the square
of the carrier generation rate
and the inverse square of the FeB concentration. This suggests that
the dissociation process involves
two recombination or electron capture events. A proportionality constant
of 5
310-15 s
describes the
dissociation rate well in the absence of other significant recombination
channels. The dissociation
rate decreases in the presence of other recombination channels. These
results can be used for reliable
detection of iron in silicon devices and materials, and for further
elucidation of the electronically
driven FeB dissociation reaction.
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