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ECN publication
Dynamics of light-induced FeB pair dissociation in crystalline silicon
Geerligs, L.J.; Macdonald, D.
Published by: Publication date:
ECN Solar Energy 1-11-2004
ECN report number: Document type:
ECN-RX--05-042 Article (scientific)
Number of pages:

Published in: Applied Physics Letters (American Institute of Physics), , 2004, Vol.85, p.5227-5229.


The dynamics of light-induced dissociation of iron?boron (FeB) pairs in p-type crystalline silicon is

investigated. The dissociation is observed to be a single-exponential process which is balanced with

thermal repairing. The dissociation rate is proportional to the square of the carrier generation rate

and the inverse square of the FeB concentration. This suggests that the dissociation process involves

two recombination or electron capture events. A proportionality constant of 5310-15 s describes the

dissociation rate well in the absence of other significant recombination channels. The dissociation

rate decreases in the presence of other recombination channels. These results can be used for reliable

detection of iron in silicon devices and materials, and for further elucidation of the electronically

driven FeB dissociation reaction.

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