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Title:
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Passivating mc-Si solar cells using SiNx:H: How to tune to maximum efficiencies
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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1-10-2005
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ECN report number:
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Document type:
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ECN-RX--05-109
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Conference Paper
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Number of pages:
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Full text:
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2
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Download PDF
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Presented at: 15th International Photovoltaic Science and Engineering Conference & Solar Energy Exhibition, Shanghai, China, 10-15 oktober 2005.
Abstract:
In this
study we determine the structural properties of SiNx:H layers
and relate these to both the deposition parameters and its passivating
qualities for solar cells. We show that Si-N
bond density is an important parameter governing both the bulk and surface
passivation of the SiNx:H layers. The best bulk and surface
passivating layers have a relatively low hydrogen diffusion coefficient
due to a high Si-N bond density. We find optimum bulk and surface passivation
for Si-N bond densities of 1.3*1023 cm-3, regardless
of nitrogen containing precursor gases used and regardless of the wafer
quality.
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