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ECN publication
Impact of common metallurgical impurities on mc-Si solar cell efficiency: p-type versus n-type doped ingots
Geerligs, L.J.; Manshanden, P.; Solheim, I.; Ovrelid, E.J.; Waernes, A.N.
Published by: Publication date:
ECN Solar Energy 11-9-2006
ECN report number: Document type:
ECN-RX--06-020 Conference Paper
Number of pages: Full text:
4 Download PDF  

Presented at: 21st European Photovoltaic Solar Energy Conference and Exhibition, Dresden, Germany, 4-8 september 2006.

Silicon solar cells based on n-type silicon wafers are less sensitive to carrier lifetime degradation due to several common metal impurities than p-base cells. The theoretical and experimental indications for this have recently received considerable attention. This paper compares p-type and n-type cells purposely contaminated with relatively high levels of impurities, processed by industrial techniques. The impurities considered are Al, Ti, and Fe, which are the dominant impurities in metallurgical silicon and natural quartz. The work also preliminary addresses the question whether the optimal wafer resistivity is the same for n-type as for p-type base mc-Si cells.

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