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ECN publication
Industrial screen printed n-type silicon solar cells with front boron emitter and efficiencies exceeding 17%
Buck, T.; Kopecek, R.; Libal, J.; Herguth, A.; Peter, K.; Rover, I.; Wambach, K.; Geerligs, L.J.
Published by: Publication date:
ECN Solar Energy 11-9-2006
ECN report number: Document type:
ECN-RX--06-050 Conference Paper
Number of pages: Full text:
4 Download PDF  

Presented at: 21st European Photovoltaic Solar Energy Conference and Exhibition, Dresden, Germany, 4-8 september 2006.

In this article we present large area solar cells on n-type silicon. The emitter of the solar cells is formed by a boron doped layer at the front side of the solar cells and was established by tube furnace BBr3-diffusion. A transparent phosphorous doped back surface field leads to a bifacial structure of the solar cells. With respect to the higher thermal sensitivity of mc-Si all relevant process steps were optimized at moderate temperatures leading to solar cells with efficiencies of 14.7% on mc-Si, 15.9% on FZ-Si and 17.1% on Cz-Si substrates. As a result of the bifacial topology new features of the solar cells arise and a significant increase of the power output can be reported. Based on these solar cells an innovative way of module interconnection is possible, discussed in a separate paper at this conference by Kopecek et al. [1].

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