|
Title:
|
|
Crystal-orientation dependence of surface recombination velocity forsilicon nitride passivated silicon wafers
|
|
|
|
Author(s):
|
|
|
|
|
|
Published by:
|
Publication date:
|
|
ECN
|
1996
|
|
|
|
ECN report number:
|
Document type:
|
|
ECN-RX--96-019
|
Other
|
|
|
|
Number of pages:
|
Full text:
|
|
6
|
Download PDF
|
Abstract:
The crystal-orientation dependence of the surface recombination velocityfor silicon nitride coated silicon wafers is investigated and compared with
thermal oxides. A qualitative very similar orientation dependence of
Seff,d(deltan) for thermal oxide and PECVD nitride coated p-Si wafers
etched in diluted HF is found with Seff,d(deltan) (100)<(110)<(111).
The type of HF-etch (diluted or buffered HF) prior to deposition has a large
influence on Seff,d(deltan) for the nitride coated p-Si wafers. For
the nitride coated n-Si wafers etched in diluted HF no orientation dependence
of Seff,d(deltan) is observed. 2 figs., 1 tab., 15 refs.
Back to List