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Precipitates and hydrogen passivation at crystal defects in n- and p-type muliticrystalline silicon
Geerligs, L.J.; Komatsu, Y.; Rover, I.; Wambach, K.; Yamaga, I; Saitoh, T.
Published by: Publication date:
ECN Solar Energy 1-11-2007
ECN report number: Document type:
ECN-W--08-011 Article (scientific)
Number of pages:

Published in: Journal of Applied Physics (American Institute of Physics), , 2007, Vol.102, 093702, p.-.

The effects of phosphorous gettering and hydrogenation on the minority carrier recombination at crystal defects in directionally solidified multicrystalline silicon are described. Representative industrial wafers, both p- and n-type, and current technologies for the gettering and hydrogenation are used. The main result of this work is a strong link between activation of extended crystal defects ECDs by gettering and their passivation by hydrogenation. It is shown that gettering or annealing increases the recombination at active as well as inactive ECDs. Surprisingly, hydrogenation can neutralize this change in activity due to the gettering. However, it neutralizes only part, at most, of the ECD activity already present before the gettering. Therefore, under current industrial processing techniques, these two high-temperature process steps individually give large change but together much less net change of the crystal defect activity. Related phenomena are observed in wafers with strongly varying impurity concentration. Finally, there is little difference in these observations between n- and p-type wafers.

Copyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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