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ECN publication
Measuring dopant concentrations in compensated p-type crystalline silicon via iron-acceptor pairing
Macdonald, D.; Cuevas, A.; Geerligs, L.J.
Published by: Publication date:
ECN Solar Energy 30-5-2008
ECN report number: Document type:
ECN-W--08-021 Article (scientific)
Number of pages:

Published in: Applied Physics Letters (American Institute of Physics), , 2008, Vol.92, 202119, p.-.

We present a method for measuring the concentrations of ionized acceptors and donors in compensated p-type silicon at room temperature. Carrier lifetime measurements on silicon wafers that contain minute traces of iron allow the iron-acceptor pair formation rate to be determined, which in turn allows the acceptor concentration to be calculated. Coupled with an independent measurement of the resistivity and a mobility model that accounts for majority and minority impurity scatterings of charge carriers, it is then possible to also estimate the total concentration of ionized donors. The method is valid for combinations of different acceptor and donor species.

Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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