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Title:
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Further improvements in surface modification of MC silicon solar cells: comparison of different post-PSG cleans for inline emitters
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Author(s):
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Published by:
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Publication date:
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ECN
Solar Energy
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1-12-2009
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ECN report number:
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Document type:
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ECN-W--09-028
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Article (scientific)
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Number of pages:
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5
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Published in: Photovoltaics International (PV-Tech), , 2009, Vol.6, p.71-75.
Abstract:
Insufficient removal of phosphosilicate glass (PSG) after inline emitter formation for crystalline silicon solar cells reduces cell efficiency. With additional chemical steps, the surface can be modified to increase both short-circuit current and open-circuit voltage. In this paper we demonstrate that the efficiency can be increased by at least 0.4% absolute by using a simple surface modification process. The process is compatible with standard crystalline silicon production processes.
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