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Title:
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Organic nonvolatile memory devices based on ferroelectricity
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Author(s):
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Naber, R.C.G.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de; Boer, B. de
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Published by:
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Publication date:
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ECN
Solar Energy
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3-8-2009
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ECN report number:
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Document type:
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ECN-W--09-033
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Article (scientific)
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Number of pages:
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13
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Published in: Advanced Materials (Wiley-VCH), , 2009, Vol.21, p.1-13.
Abstract:
A memory functionality is a prerequisite for many applications of electronic
devices. Organic nonvolatile memory devices based on ferroelectricity are a
promising approach toward the development of a low-cost memory technology.
In this Review Article we discuss the latest developments in this area
with a focus on three of the most important device concepts: ferroelectric
capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.
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