Title:
|
Progression of n-type base crystalline silicon solar cells
|
|
Author(s):
|
|
|
Published by:
|
Publication date:
|
ECN
Solar Energy
|
3-5-2011
|
|
ECN report number:
|
Document type:
|
ECN-W--11-023
|
Article (scientific)
|
|
Number of pages:
|
|
8
|
|
Published in: Photovoltaics International (PV-Tech), , 2011, Vol.12, p.94-102.
Abstract:
This paper reviews the status of solar cell technology based on n-type crystalline silicon wafers. It aims to explain the reasons behind the strong and increasing attention for n-type cells, including the inherent advantages of n-type base doping for high diffusion length, and for the industrialization of designs with good rear-side electronic and optical properties. The focus will be on cells using diffused junctions.
More Information:
Back to List