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ECN publication
In-situ doping and local overcompensation of high performance LPCVD polysilicon passivated contacts as approach to industrial IBC cells
Wu, Y.; Stodolny, M.K.; Geerligs, L.J.; Lenes, M.; Luchies, J.M.
Published by: Publication date:
ECN Solar Energy 10-8-2016
ECN report number: Document type:
ECN-W--16-024 Article (scientific)
Number of pages:

Published in: Energy Procedia (Elsevier), , 2016, Vol.92, p.427-433.

In this work, we investigate polysilicon passivation contacts, to be used for high performance IBC cells. We demonstrate an LPCVD process for in-situ p-type doped polysilicon. The p-type polysilicon can be locally overcompensated to n-type polysilicon using phosphorous implantation or POCl3 diffusion. Both contacts show excellent surface passivation, with recombination current (Jo) of 12 fA/cm2 for p-poly on a polished Si surface, and less than 10 fA/cm2 for compensated n-poly both on textured and polished surfaces. These polysilicon layers are implemented in the fabrication of n-PERT cells with front and rear polysilicon contacts. The resulting textured half-fabricated cells have an implied Voc of 701 mV after hydrogenation via PECVD deposition of SiNx:H. Different metallization processes, relevant for IBC cells, are applied. A Voc of 685 mV is obtained for the best cell metallized with low-temperature metallization (ITO/low-temperature Ag paste), and 678 mV is obtained for the best cell with industrial screen-printed firing-through contacts. In these n-PERT cells the same thin oxide layer is used for p-type and n-type polysilicon contacts.

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