|
Title:
|
|
Continuous SiNx plasma processing using the inline MW RPECVD system
|
|
|
|
Author(s):
|
|
|
|
|
|
Published by:
|
Publication date:
|
|
ECN
Solar Energy
|
1-10-2001
|
|
|
|
ECN report number:
|
Document type:
|
|
ECN-RX--01-024
|
Conference Paper
|
|
|
|
Number of pages:
|
Full text:
|
|
4
|
Download PDF
|
Presented at: 17th European Photovoltaic Solar Energy Conference, Munich, Germany, 22-26 oktober 2001.
Abstract:
We investigated how long SiNx:H depositions can be performed continuously using the MicroWave Remote Plasma Enhanced Chemical Vapour Deposition (MW RPECVD) system at ECN without any cleaning or other interruption of the process. It has been shown that the system can be used for at least 20 hours without significant changes in properties of the deposited layers. The refractive index n and the extinction coefficient k at a wavelength of 630 nm do not change. Only the deposition rate increases slightly and that results in a somewhatthicker layer (less than 5% increase). The solar cell parameters remain constant or improve slightly in the course of time. Voc does not change within the experimental error and Jsc increases about 2%. This increase is caused by a
better passivation at the front surface. Furthermore, a small reduction in red response is observed but this hardly affects Jsc. The observed changes might be caused by parasitic depositions that result in changes of the plasma conditions. It is still unclear how these changes in plasma conditions influence the passivating properties and the deposition rate.
Back to List